? 2011 ixys all rights reserved 1 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. six-pack xpt igbt pin confguration see outlines. features: ? high level of integration ? rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - square rbsoa @ 3x i c - low emi ? thin wafer technology combined with the xpt design results in a competitive low v ce(sat) ? temperature sense included ? sonic? diode - fast and soft reverse recovery - low operating forward voltage application: ? ac motor drives ? pumps, fans ? washing machines ? air-conditioning system ? inverter and power supplies package: ? e1 package ? assembly height is 17.1 mm ? insulated base plate ? pins suitable for wave soldering and pcb mounting ? ul registered e72873 part name (marking on product) MIXA40W1200TML e72873 v ces = 1200 v i c25 = 60 a v ce(sat) = 1.8 v 11, 12 15, 16 19, 20 22 21 2 1 18 17 4 3 14 13 6 5 10, 23 9, 24 ntc 8 7
? 2011 ixys all rights reserved 2 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. igbt t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c 1200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 60 40 a a p tot total power dissipation t c = 25c 195 w v ce(sat) collector emitter saturation voltage i c = 35 a; v ge = 15 v t vj = 25c t vj = 125c 1.8 2.1 2.1 v v v ge(th) gate emitter threshold voltage i c = 1.5 ma; v ge = v ce t vj = 25c 5.4 5.9 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.02 0.3 0.15 ma ma i ges gate emitter leakage current v ge = 20 v 500 na q g(on) total gate charge v ce = 600 v; v ge = 15 v; i c = 35 a 106 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 27 w 70 40 250 100 3.8 4.1 ns ns ns ns mj mj rbsoa reverse bias safe operating area v ge = 15 v; r g = 27 w ; v cek = 1200 v t vj = 125c 105 a i sc (scsoa) short circuit safe operating area v ce = 900 v; v ge = 15 v; t vj = 125c r g = 27 w; t p = 10 s; non-repetitive 140 a r thjc r thch thermal resistance junction to case thermal resistance case to heatsink (per igbt) 0.21 0.64 k/w k/w diode d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 25c 1200 v i f25 i f80 forward current t c = 25c t c = 80c 44 29 a a v f forward voltage i f = 30 a; v ge = 0 v t vj = 25c t vj = 125c 1.95 1.95 2.2 v v q rr i rm t rr e rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v di f /dt = -600 a/s t vj = 125c i f = 30 a; v ge = 0 v 3.5 30 350 0.9 c a ns mj r thjc r thch thermal resistance junction to case thermal resistance case to heatsink (per diode) 0.4 1.2 k/w k/w
? 2011 ixys all rights reserved 3 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/50 resistance t c = 25c 4.75 5.0 3375 5.25 kw k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 125 150 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz 2500 v~ cti comparative tracking index - f c mounting force 40 80 n d s d a creep distance on surface strike distance through air 12.7 12.7 mm mm weight 40 g t c = 25c unless otherwise stated 0 2 5 50 75 1 00 12 5 15 0 1 0 10 0 1 00 0 10 00 0 100 00 0 r [ ? ] t y p . n t c resistance vs. temperatur e t c [c]
? 2011 ixys all rights reserved 4 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. xxxxxx..... ywwx xxx... logo ul part name date code prod. code part number m = module i = igbt x = xpt a = standard 40 = current rating [a] w = 6-pack 1200 = reverse voltage [v] t = ntc ml = e1-pack ordering part name marking on product delivering mode base qty ordering code standard mixa 40 w 1200 tml MIXA40W1200TML box 10 510628 circuit diagram outline drawing dimensions in mm (1 mm = 0.0394) 11, 12 15, 16 19, 20 22 21 2 1 18 17 4 3 14 13 6 5 10, 23 9, 24 ntc 8 7
? 2011 ixys all rights reserved 5 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. 0 1 2 3 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 2 0 4 0 6 0 8 0 0 2 4 6 8 1 0 0 1 2 3 4 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 v ce [ v ] i c [ a ] q g [nc] v g e [ v ] 9 v 1 1 v 5 6 7 8 9 1 0 1 1 1 2 1 3 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 0 5 1 0 1 5 2 0 1 3 v 2 0 4 0 6 0 80 3 4 5 6 e [mj] e o n f i g. 1 t y p. ou tput charact e r i sti c s v ce [v ] i c [a] v g e = 1 5 v 1 7 v 1 9 v f i g. 2 t y p. out p u t ch ar a cter i sti cs i c [a] f i g. 3 t y p. tranfer ch ar a cter i sti cs v g e [v ] f i g . 4 t y p. tu r n -on g a te charge f i g. 5 t y p . s w itch i ng e n e r g y vs. co ll e ct o r cur r e n t e of f f i g . 6 t y p. s w itch i ng en e r g y vs. g a te res i s t a n c e r g [ ] e [m j ] i c [a ] e o n e o f f t v j = 12 5 c t v j = 2 5c v g e = 1 5 v t v j = 1 2 5 c t v j = 1 2 5c t v j = 2 5c i c = 35 a v ce = 6 0 0 v r g = 2 7 v c e = 6 0 0 v v g e = 15 v t v j = 1 2 5 c i c = 3 5 a v c e = 6 0 0 v v g e = 15 v t v j = 1 2 5 c igbt t1 - t6
? 2011 ixys all rights reserved 6 - 6 20110118b MIXA40W1200TML ixys reserves the right to change limits, test conditions and dimensions. diode d1 - d6 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj = 125c v r = 600 v 15 a 30 a 60 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 i rr [a] di f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a fig. 9 typ. peak reverse current i rm vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 15 a 30 a 60 a t vj = 125c v r = 600 v fig. 10 typ. recovery time t rr versus di/dt fig. 11 typ. recovery energy e rec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 e rec [mj] di f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance diode igbt igbt frd r i t i r i t i 1 0.152 0.0025 0.341 0.0025 2 0.072 0.03 0.217 0.03 3 0.308 0.03 0.348 0.03 4 0.108 0.08 0.294 0.08
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